Lithographic method and apparatus

ABSTRACT

A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is the U.S. National Stage Application of InternationalPatent Application No. PCT/EP2016/076477, filed on Nov. 3, 2016 whichclaims priority of EP application 15197050.6 which was filed on Nov. 30,2015 both of which are incorporated herein in their entirety byreference.

FIELD

The present invention relates to a lithographic method and apparatus.

BACKGROUND

A lithographic apparatus is a machine that applies a desired patternonto a target portion of a substrate (e.g. a wafer). Lithographicapparatus can be used, for example, in the manufacture of integratedcircuits (ICs). In that circumstance, a patterning device, which isalternatively referred to as a mask or a reticle, may be used togenerate a circuit pattern corresponding to an individual layer of theIC, and this pattern can be imaged onto a target portion (e.g.comprising part of, one or several dies) on a wafer (e.g. a siliconwafer) that has a layer of radiation-sensitive material (resist). Ingeneral, a single wafer will contain a network of adjacent targetportions that are successively exposed. Known lithographic apparatusinclude so-called scanners, in which each target portion is irradiatedby scanning the pattern through the beam in a given direction (the“scanning”-direction) while synchronously scanning the wafer parallel oranti parallel to this direction.

When projecting an image onto a wafer it is desirable to ensure that awafer held on a wafer table is correctly positioned to receive theprojected image. The wafer table is positioned using a positioningsystem which has six degrees of freedom (X, Y, Z, Rx, RY, Rz). For anygiven position of the wafer table an error in each of the six degrees offreedom will be present. A calibration of the positioning system isperformed to measure and record these errors. This calibration allowsthe wafer table to be accurately positioned during subsequent operationof the lithographic apparatus. One known method of calibrating thepositioning of the wafer table is to image alignment marks onto a waferin a closely packed arrangement, and then to develop the imagedalignment marks and measure their positions. This method is very timeconsuming, and may for example require several hours.

It is desirable to provide, for example, a method which obviates ormitigates one or more of the problems of the prior art, whetheridentified herein or elsewhere.

SUMMARY

According to a first aspect of the invention there is provided a methodfor exposing a wafer in a lithographic apparatus. The method comprisesexecuting at least one calibration measurement during an exposuresequence of a wafer, each calibration measurement comprising: using atleast one radiation pole to illuminate a mask side diffraction gratingon at least one of a support structure supporting a mask of a projectionsystem and the mask of the lithographic apparatus; coupling at least twodifferent resulting diffraction orders per illumination pole through theprojection system; using the projection system to project thediffraction orders onto an object grating on or adjacent an exposureroute of a wafer such that a pair of combination diffraction orders isformed by diffraction of the diffraction orders; coupling thecombination diffraction orders back through the projection system to adetector system configured to measure an intensity of the combinationdiffraction orders; and using the measured intensity of the combinationdiffraction orders to measure a position of the object grating.

In this way, accurate and efficient calibration measurements may becarried out during an exposure operation of a lithographic apparatuswith minimal detriment to the throughput of the lithographic apparatus.It will be appreciated that the exposure sequence of the wafer mayinclude steps carried out prior and subsequent to exposure of any targetportions of the wafer, including, for example, pre-positioning of thewafer and positioning subsequent to exposure. The detector system maycomprise one or more detectors.

The method may comprise adjusting, responsive to at least onecalibration measurement, the exposure route of the wafer and/or thesupport structure prior to exposing a target portion of the wafer.

At least one calibration measurement may be executed at the beginning ofan exposure sequence prior to exposure of any target portions of thewafer.

The object grating may be positioned off the wafer on the wafer table.Alternatively, the object grating may be positioned on the wafer. Forexample, the object grating may be positioned in a scribe lane betweentarget portions of the wafer. There may be a plurality of objectgratings with at least one object grating positioned on the wafer, andat least one object grating positioned on the wafer table outside thewafer.

At least one calibration measurement may be executed following exposureof a target portion of the wafer and prior to exposure of a nextexposure sequence.

The method may further comprise adjusting an illumination mode of theradiation beam prior to executing at least one calibration measurement.

The method may further comprise exposing a first target portion of thewafer with a radiation beam having a first illumination mode andadjusting the illumination mode of the radiation beam to provide themultiple radiation poles and performing at least one calibrationmeasurement with the adjusted illumination mode.

The method may further comprise moving the support structure to move theradiation beam from the mask to the diffraction grating on the supportstructure.

The method may further comprise filtering out at least one unwanteddiffraction order generated by the mask side diffraction grating and/orthe object grating.

The method may further comprise filtering out unwanted diffractionorders generated by the mask side diffraction grating to transmit onlytwo diffraction orders per illumination pole into the projection system.

The method may further comprise filtering out unwanted diffractionorders generated by the object grating such that only the combinationdiffraction orders are incident upon the detectors.

The filtering out of unwanted diffraction orders may be performed usingwalls of a tower which extends from the vicinity of the mask sidediffraction grating and away from a field plane of the mask sidediffraction grating.

The method may further comprise using openings in the walls of the towerto transmit desired diffraction orders generated by the mask sidediffraction grating.

The method may further comprise using reflective outer surfaces of atower which extends from the vicinity of the mask side diffractiongrating and away from a field plane of the mask side diffraction gratingto reflect the combination diffraction orders to the detectors whilstfiltering out unwanted diffraction orders.

The openings in the walls of the tower and the reflective outer surfacesof the tower may be offset relative to an optical axis.

The method may further comprise using a screen between the mask and theprojection system to filter out unwanted diffraction orders generated bythe mask side diffraction grating.

The intensity of radiation incident at locations on the screen whichcorrespond with the combination diffraction orders may be measured.

The illumination radiation poles may be offset relative to an opticalaxis.

The object grating may be one-dimensional and may extend in an objectgrating direction which is substantially parallel to a scanningdirection of the lithographic apparatus, and measurements of theposition of the object grating in the object grating direction may beobtained using two radiation poles.

The object grating may be one-dimensional and may extend in an objectgrating direction which is substantially perpendicular to a scanningdirection of the lithographic apparatus, and measurements position ofthe object grating in that direction may be obtained using two radiationpoles.

Two detectors may be used to measure the intensity of the combinationdiffraction orders, the two detectors being spaced apart in the samedirection as the object grating direction.

The mask side diffraction grating may be two-dimensional.

The mask side diffraction grating may extend in a mask side diffractiongrating direction which is non-parallel to a scanning direction of thelithographic apparatus.

The object grating may be two-dimensional and may extend acrosssubstantially an entire wafer.

The object grating may comprise squares separated by channels, theobject grating having a duty cycle which is not one-to-one.

The period of the object grating may correspond with the period of themask side diffraction grating.

Multiple mask side diffraction gratings may be illuminatedsimultaneously and resulting signals output from the detectors may bemonitored.

The mask side diffraction gratings may be positioned to provide a phaseseparation of approximately 120 degrees between adjacent mask sidediffraction gratings.

Multiple object grating positions may be measured simultaneously, anddifferences between measured object grating positions may be determined.

The differences between measured object grating positions may be used togenerate a map of vectors indicative of wafer positioning errors.

The vectors indicative of wafer positioning errors may characterise theposition of the wafer with three positional degrees of freedom and threerotational degrees of freedom.

The wafer positioning error map may be subsequently used to correctwafer positioning errors during lithographic exposure of wafers.

The object grating positions may be measured and wafer positioningerrors determined only for wafer positions that will be used duringsubsequent lithographic exposure of a particular pattern onto wafers.

The object grating position may be measured in a direction substantiallyin a plane of the wafer and may be measured in a direction substantiallyperpendicular to a plane of the wafer.

The wafer grating position substantially perpendicular to the plane ofthe wafer may be obtained by determining the difference between signalsoutput from detectors which detect corresponding combination diffractionorders.

The difference between signals may be determined for signals output fromdifferent detectors at the same time.

The difference between signals may be determined for signals output fromthe same detectors at different times.

Four radiation poles may be used to illuminate the mask diffractiongrating and four detectors may be provided, each detector measuring theintensity of a different combination diffraction order.

Two of the detectors may be used to measure radiation intensity atlocations separated in a first direction and two of the detectors may beused to measure radiation at locations separated in a second direction,the second direction being substantially perpendicular to the firstdirection.

There is also described herein a measurement method comprising usingmultiple radiation poles to illuminate a diffraction grating on a maskat a mask side of a projection system of a lithographic apparatus,coupling at least two different resulting diffraction orders perillumination pole through the projection system, using the projectionsystem to project the diffraction orders onto a grating on a wafer suchthat a pair of combination diffraction orders is formed by diffractionof the diffraction orders, coupling the combination diffraction ordersback through the projection system to detectors configured to measurethe intensity of the combination diffraction orders, and using themeasured intensity of the combination diffraction orders to measure theposition of the wafer grating.

The method advantageously allows wafer grating position to be measuredin a manner that is not known in the prior art. This may allow theposition of a wafer table to be calibrated in a more time efficientmanner than is known from the prior art.

There is also described herein a mask sensor apparatus comprising asubstrate provided with a grating, a tower extending from the substrateand having walls which are positioned to filter out unwanted diffractionorders generated by the grating, and detectors positioned to receivediffraction orders reflected by outer surfaces of the tower walls.

The tower may include openings which are offset relative to an opticalaxis.

The grating, tower and detectors may comprise a module, and a pluralityof modules may be provided on the substrate.

There is also described herein a mask sensor apparatus comprising asubstrate provided with a grating, a screen separated from the plane ofthe substrate, the screen including an opening which is positioned toallow transmission of desired diffraction orders generated by thegrating, and detectors arranged to receive radiation incident on anopposite side of the screen from the substrate, the detectors beingpositioned to receive diffraction orders which are incident upon thescreen at locations which correspond with diffraction orders desired tobe detected.

The opening may include arms which are offset relative to an opticalaxis.

The grating, screen opening and detectors may comprise a module, and themask sensor may comprise a plurality of modules.

There is also described herein a wafer provided with a diffractiongrating, the diffraction grating being two-dimensional and extendingacross substantially the entire wafer.

The diffraction grating may comprises squares separated by channelswhich have a duty cycle which is not one-to-one.

The diffraction grating may include gaps in which other marks areprovided.

There is also described herein a measurement method comprising usingmultiple radiation poles to illuminate a diffraction grating on a firstside of projection optics of a lithographic tool, coupling at least twodifferent resulting diffraction orders per illumination pole through theprojection optics, using the projection optics to project thediffraction orders onto a grating on an object such that a pair ofcombination diffraction orders is formed by diffraction of thediffraction orders, coupling the combination diffraction orders backthrough the projection optics to detectors configured to measure theintensity of the combination diffraction orders, and using the measuredintensity of the combination diffraction orders to measure the positionof the object grating.

There is also described herein a lithographic tool comprising anillumination system for providing a beam of radiation, a supportstructure supporting a mask sensor apparatus which comprises a substrateprovided with a grating for diffracting the radiation beam, a supportstructure for holding an object, and projection optics for projectingthe diffracted radiation beam onto the object, wherein the mask sensorapparatus further comprises a tower extending from the substrate andhaving walls which are positioned to filter out unwanted diffractionorders generated by the grating, and detectors positioned to receivediffraction orders reflected by outer surfaces of the tower walls.

There is also described herein a lithographic tool comprising anillumination system for providing a beam of radiation, a supportstructure supporting a mask sensor apparatus which comprises a substrateprovided with a grating for diffracting the radiation beam, a supportstructure for holding an object, and projection optics for projectingthe diffracted radiation beam onto the object, wherein the mask sensorapparatus further comprises a screen separated from the plane of thesubstrate, the screen including an opening which is positioned to allowtransmission of desired diffraction orders generated by the grating, anddetectors arranged to receive radiation incident on an opposite side ofthe screen from the substrate, the detectors being positioned to receivediffraction orders which are incident upon the screen at locations whichcorrespond with diffraction orders desired to be detected.

There is also described herein a measurement method comprising using aradiation pole to illuminate a diffraction grating on a mask at a maskside of a projection system of a lithographic apparatus, coupling atleast two different resulting diffraction orders through the projectionsystem, using the projection system to project the diffraction ordersonto a grating on a wafer such that a combination diffraction order isformed by diffraction of the diffraction orders, coupling thecombination diffraction order back through the projection system to adetector configured to measure the intensity of the combinationdiffraction order, and using the measured intensity of the combinationdiffraction order to measure the position of the wafer grating.

There is also described herein a lithographic apparatus comprising anillumination system for providing a beam of radiation, a supportstructure supporting a mask sensor apparatus which comprises a substrateprovided with a grating for diffracting the radiation beam, a substratetable for holding a substrate, and a projection system for projectingthe diffracted radiation beam onto a target portion of the substrate,wherein the mask sensor apparatus further comprises a tower extendingfrom the substrate and having walls which are positioned to filter outunwanted diffraction orders generated by the grating, and detectorspositioned to receive diffraction orders reflected by outer surfaces ofthe tower walls.

There is also described herein a lithographic apparatus comprising anillumination system for providing a beam of radiation, a supportstructure supporting a mask sensor apparatus which comprises a substrateprovided with a grating for diffracting the radiation beam, a substratetable for holding a substrate, and a projection system for projectingthe diffracted radiation beam onto a target portion of the substrate,wherein the mask sensor apparatus further comprises a screen separatedfrom the plane of the substrate, the screen including an opening whichis positioned to allow transmission of desired diffraction ordersgenerated by the grating, and detectors arranged to receive radiationincident on an opposite side of the screen from the substrate, thedetectors being positioned to receive diffraction orders which areincident upon the screen at locations which correspond with diffractionorders desired to be detected.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of exampleonly, with reference to the accompanying schematic drawings in whichcorresponding reference symbols indicate corresponding parts, and inwhich:

FIG. 1 depicts schematically a lithographic apparatus according to anembodiment of the invention;

FIG. 2 depicts schematically part of the lithographic apparatus and ameasurement method according to an embodiment of the invention;

FIGS. 3-5 depict schematically generation and measurement of diffractionorders according to an embodiment of the invention;

FIGS. 6-9 depict results of a simulation the embodiment depicted inFIGS. 3-5;

FIG. 10 schematically depicts a mask sensor apparatus comprising aplurality of mask sensor modules according to an embodiment of theinvention;

FIG. 11 depicts one wall of one of the mask sensor modules;

FIG. 12 depicts a method of calibrating wafer table positions across thesurface of a wafer;

FIG. 13 schematically depicts a diffraction grating which forms part ofsome embodiments of the invention;

FIG. 14 schematically depicts mixing of diffraction orders in anunwanted manner;

FIG. 15 schematically depicts an embodiment of the invention whichavoids or reduces unwanted mixing of diffraction orders;

FIG. 16 schematically depicts the embodiment of FIG. 15 but shows theeffect of off-axis illumination;

FIGS. 17-19 schematically depict generation and measurement ofdiffraction orders according to an embodiment of the invention whichavoids or reduces unwanted mixing of diffraction orders;

FIGS. 20-22 depict a tower which forms part of the embodiment depictedin FIGS. 17-19;

FIG. 23 schematically depicts an alternative embodiment of theinvention;

FIG. 24 schematically depicts the embodiment shown in FIG. 15 and analternative related embodiment;

FIG. 25 schematically depicts a further alternative embodiment of theinvention;

FIG. 26 schematically depicts a further alternative embodiment of theinvention;

FIG. 27 schematically depicts a mask sensor arrangement in a furtheralternative embodiment of the invention;

FIG. 28 schematically depicts example wafer diffraction gratingplacement in an embodiment of the invention; and

FIG. 29 schematically depicts an alternative mask sensor arrangement.

DETAILED DESCRIPTION

FIG. 1 schematically depicts a lithographic apparatus according to aparticular embodiment of the invention. The apparatus comprises:

-   -   an illumination system (illuminator) IL arranged to condition a        beam PB of radiation (e.g. DUV radiation at 193 nm) and generate        a desired illumination mode;    -   a support structure MT which supports a mask sensor apparatus        MS, the support structure being connected to first positioning        device PM to accurately position the mask sensor apparatus with        respect to item PL;    -   a wafer table WT for holding a wafer W and connected to second        positioning device PW for accurately positioning the wafer with        respect to item PL; and    -   a projection system (e.g. a series of refractive lenses) PL        configured to image a pattern imparted to the radiation beam PB        by mask sensor apparatus MS onto the wafer W.

As here depicted, the apparatus is of a transmissive type (e.g.employing a transmissive mask). Alternatively, the apparatus may be of areflective type (e.g. an EUV lithographic apparatus).

The illuminator IL receives a beam of radiation from a radiation sourceSO. The source and the lithographic apparatus may be separate entities,for example when the source is an excimer laser. In such cases, thesource is not considered to form part of the lithographic apparatus andthe radiation beam is passed from the source SO to the illuminator ILwith the aid of a beam delivery system BD comprising for examplesuitable directing mirrors and/or a beam expander. The source SO and theilluminator IL, together with the beam delivery system BD if required,may be referred to as a radiation system.

The illuminator IL may comprise adjusting means for adjusting theangular intensity distribution of the beam. The adjusting means may beused to adjust the outer and/or inner radial extent (commonly referredto as sigma-outer and sigma-inner, respectively) of the radiation beamin a pupil plane of the illuminator. In addition, the adjusting meansmay be used to select illumination modes such as a dipole mode, aquadrupole mode, or other mode. The illuminator IL provides aconditioned beam of radiation PB having a desired illumination mode.

The radiation beam PB is incident on the mask sensor apparatus MS whichis held by the support structure MT. The mask sensor apparatus comprisesa diffraction grating MG which diffracts the radiation beam. Thediffracted radiation beam passes through the projection system PL, whichfocuses the beam onto the wafer W and thereby forms an image of the maskdiffraction grating MG. The wafer is provided with an array ofdiffraction gratings WG (only two of which are schematicallyillustrated) or with a single diffraction grating which extends acrosssubstantially the entire wafer (described further below). Atwo-dimensional grid plate (not shown) is used to monitor the positionof the second positioning device PW. In an alternative arrangementinterferometers (not shown) may be used to monitor the position of thesecond positioning device PW. The second positioning device is used tomove the wafer table WT so as to position a wafer diffraction grating WGrelative to the image of the mask diffraction grating MG. The waferdiffraction grating WG diffracts the incident radiation. A proportion ofthis diffracted radiation passes back through the projection system PLand is incident upon detectors D1, D2 which form part of the mask sensorapparatus MS. The detectors D1, D2 provide output signals which can beused to measure the position of the wafer diffraction grating WG in theX and Z directions. More than two detectors may be provided, asdescribed further below. A controller CT controls movement of thesubstrate table WT. The controller CT may also receive signals outputfrom the detectors D1, D2 and record these as a function of the positionsubstrate table WT as measured by the two-dimensional grid plate (orinterferometer). Signals output from the detectors D1, D2 may forexample be communicated to the controller CT wirelessly. Alternatively,signals output from the detectors D1, D2 may be retained in a memorywhich forms part of the mask sensor apparatus MS and may be retrievedfrom the memory after the mask sensor apparatus MS has been removed fromthe lithographic apparatus (or transferred to some other part of thelithographic apparatus). In an embodiment, described further below,optical fibres may be located at positions D1, D2 and used to coupleincident radiation to remotely located detectors. The signals outputfrom the detectors D1, D2 may be used to measure the position of thewafer W and thereby provide for calibration of the second positioningdevice PW. A processor may be used to calculate the position of thewafer W using the signals output from the detectors. The processor mayfor example form part of the controller CT.

FIG. 2 illustrates schematically an example of how the mask sensorapparatus may be used to generate a combined diffraction order which,when measured by a detector D1 can be used to determine the position ofthe wafer diffraction grating WG. The mask sensor apparatus MS comprisesa mask substrate S upon which a diffraction grating MG, a detector D1and a pair of walls 8,9 are provided. The mask sensor apparatus MS islocated on the mask side of the projection system PL of the lithographicapparatus (i.e. where a mask would be located during normal operation ofthe lithographic apparatus). A radiation beam PB is incident on the maskdiffraction grating MG. The radiation beam is generated by the source SO(see FIG. 1). Thus, the radiation beam is actinic radiation with awavelength which corresponds with the wavelength that will be used bythe lithographic apparatus to expose wafers during production (e.g. 193nm). The radiation beam is a dipole (or quadrupole) mode, only one poleof which is shown in FIG. 2 for simplicity. The mask diffraction gratingdiffracts the radiation beam to form a zero diffraction order L0 and afirst diffraction order L1. These two diffraction orders L0, L1propagate through the projection system PL and are focussed by theprojection system onto a wafer W. Other diffraction orders are generatedbut these are either blocked by the walls 8,9 (the walls act as a filterwhich filters out unwanted diffraction orders) or fall outside of thenumerical aperture of the projection system PL. The wafer W is providedwith a diffraction grating WG which diffracts the incident radiation.Although several diffraction orders may be generated only twodiffraction orders are illustrated. The first illustrated diffractionorder is the second diffraction order of the wafer grating WG generatedfrom the zero order radiation diffracted by the mask grating MG. This isidentified with the notation L0,2. The second illustrated diffractionorder is the first diffraction order of the wafer grating WG generatedfrom the first order radiation diffracted by the mask grating MG. Thisis identified with the notation L1,1. These two diffraction orders L0,2,L1,1 co-propagate together (they are collinear). The two diffractionorders L0,2, L1,1 may be referred to as a combination diffraction order(or combination order). The combination order L0,2, L1,1 propagates backthrough the projection system PL. The combination order L0,2, L1,1 isthen incident upon a reflective surface M1 of the wall 9, which directsthe combination order to the detector D1. The detector D1 is anintensity detector and measures the intensity of the combination orderL0,2, L1,1. Other diffraction orders (including combination orders) maypropagate back through the projection system PL, but these other ordersare not incident upon the reflective surface M1 of the wall 9 and thusare not incident upon the detector D1. The wall 9 thus again acts as afilter, this time selecting the combination order L0,2, L1,1 andexcluding other diffraction orders. The walls 8,9 therefore act asfilters twice, once for radiation which has been diffracted from themask grating MG and once for radiation which has been diffracted fromthe wafer grating WG.

The intensity of the combination order L0,2, L1,1 depends upon therelative alignment between the wafer grating WG and the aerial image ofthe mask grating MG formed by the incident diffraction orders L0 and L1.Alignment of bright lines of the mask grating aerial image withreflective portions of the wafer grating will generate a high intensityat the detector D1. Conversely, alignment of dark lines of the maskgrating aerial image with reflective portions of the wafer grating willgenerate a low intensity at the detector D1. Thus, movement of the wafergrating WG (and wafer) in the X-direction will change the relativealignment of bright lines of the mask grating aerial image andreflective portions of the wafer grating, and will cause the intensityof the combination order to vary in a sinusoidal manner. Althoughgrating lines are referred to here the same applies to gratings whichare not formed from lines (e.g. gratings which extend in two directionssuch as checker-board type gratings).

Since the aerial image of the mask grating is formed by two diffractionorders L0, L1 which are not symmetric about the optical axis of theprojection system PL, the aerial image is tilted with respect to theoptical axis. The angle of tilt of the aerial image bisects the twoincident diffraction orders L0, L1 and is denoted in FIG. 2 as 0. Due tothe angle of tilt θ of the mask grating aerial image, the relativealignment of bright lines of the aerial image and reflective portions ofthe wafer grating will vary as a function of the Z-direction position ofthe wafer grating (i.e. the position of the wafer grating relative tothe focal plane of the projection system). Again, although grating linesare referred to here the same applies to gratings which are not formedfrom lines.

As is explained further below, when multiple detectors are used amovement in the Z-direction will generate signals at the detectors whichare different from the signals generated by a movement in theX-direction. This allows discrimination between Z-direction measurementsand X-direction measurements.

A modified arrangement of the mask sensor apparatus MS is shownschematically in FIG. 3. The mask sensor apparatus of FIG. 3 is arrangedto transmit and detect different diffraction orders from the mask sensorapparatus of FIG. 2. In common with the embodiment shown in FIG. 2, themask sensor apparatus MS shown in FIG. 3 comprises a mask substrate Sand a diffraction grating MG. Instead of showing a single pole ofincident radiation and a single detector, FIG. 3 shows two incidentpoles L,R and two detectors D1, D2. An expanded view of a maskdiffraction grating MG viewed from above is included in FIG. 3. Walls18, 19 extend below the mask substrate S and include openings 10, 11which allow passage of radiation between the openings and the masksubstrate S. Due to the schematic nature of FIG. 3 and for simplicity ofillustration, the manner in which the walls 18, 19 are connected to themask substrate S is not shown (this is described further below). Themask sensor apparatus MS may be provided with additional componentswhich are omitted here for simplicity of illustration.

The mask sensor apparatus MS is illuminated using a radiation beam whichcomprises a dipole mode, represented schematically in FIG. 3 by firstand second poles L,R. The dipole mode may have a sigma-inner of around ⅔and a sigma-outer of around 3/3. In other words the dipole mode occupiesthe outer third of the numerical aperture of the projection system (thismay be considered to be a relatively high sigma). The mask diffractiongrating MG diffracts this incident radiation into a plurality ofdiffraction orders. This is schematically depicted in FIG. 2 as zeroorder L0, first order L1 and second order L2 which are generated fromthe left hand pole L of the dipole, and zero order R0, first order R1and second order R2 which are generated from the right hand pole R ofthe dipole. The walls 18,19 are reflective on their outer surfaces buthave inner surfaces which act to block radiation. Thus, the second orderdiffraction L2, R2 is blocked by the walls 18,19 (the walls 18,19 filterout the second order diffraction). In any event, the second orderdiffraction L2, R2 has a relatively small amplitude due to theone-to-one duty cycle of the mask diffraction grating MG. Due to theblocking effect of the mirrors M1, M2, only the zero orders L0, R0 andfirst orders L1, R1 enter the projection system PL of the lithographicapparatus (not shown) and are imaged onto a wafer. Higher diffractionorders (i.e. orders greater than the second order) fall outside thenumerical aperture of the projection lens.

FIG. 4 shows schematically a wafer W upon which the radiation diffractedby the mask grating is incident after passing through the projectionsystem. FIG. 4 also shows radiation which has been diffracted by adiffraction grating WG provided on the wafer. The wafer grating WG isreflective rather than transmissive, but for ease of illustrationradiation which has been reflected from the wafer grating is shownbeneath the wafer W. Since the wafer grating WG is reflective, theincident radiation undergoes reflection in addition to being diffractedby the wafer grating.

An expanded view of the wafer grating WG viewed from above is includedin FIG. 4. The wafer grating WG is symmetrical and has a period which isdouble the period of the mask grating MG (ignoring the effect of areduction factor of the projection system PL). The incident radiationcomprises zero and first order radiation R0, R1, L0, L1. The wafergrating WG diffracts the incident radiation into several diffractionorders, only some of which are shown in FIG. 4. Dealing first with thezero order incident radiation L0, the first two diffracted ordersgenerated from this radiation are shown. These are the zero order L0,0and the first order L0,1. The second order will have a low intensity dueto the one-to-one duty cycle of the wafer grating WG and is notillustrated. Since the period of the wafer grating WG is twice theperiod of the mask grating MG, the angular separation betweendiffraction orders is half that seen for the mask grating.

Turning to the first order incident radiation L1, this is diffracted asa zero order L1,0 and a first order L1,−1. Second order diffraction willalso occur but is not shown here because it has a low intensity due tothe one-to-one duty cycle of the wafer grating WG. Because the angularseparation between diffraction orders is half that seen at the mask, thefirst diffraction order L0,1 generated from the zero order incidentradiation L0 and the first diffraction order L1,−1 generated from thefirst order incident radiation L1 overlap each other. The firstdiffraction orders L0,1 and L1,−1 are coherent with each other becausethey originate from the same source SO and are imaged by the projectionsystem PL (see FIG. 1) which is diffraction limited. Thus, the overlapbetween the first diffraction orders L0,1 and L1,−1 generatesinterference. This interference is illustrated schematically by stripedshading. The phase of the interference between the first diffractionorders L0,1 and L1,−1 will vary depending upon the position of the wafergrating WG, as is discussed further below. The diffraction orders L0,1and L1,−1 are collectively be referred to as a combination diffractionorder (or combination order).

The other incident radiation R0, R1 is diffracted in the same manner.Thus, the zero order incident radiation R0 is diffracted as a zero orderR0,0 and a first order R0,1. The first order incident radiation R1 isdiffracted as a zero order R1,0 and a first order R1,−1. The firstdiffraction orders R0,1 and R1,−1 overlap with each other and thusinterfere with each other. The interference is illustrated schematicallyby striped shading. The phase of the interference between the firstdiffraction orders R0,1 and R1,−1 will vary depending upon the positionof the wafer grating WG. The diffraction orders R0,1 and R1,−1 arecollectively be referred to as a combination diffraction order (orcombination order).

FIG. 5 schematically shows detection by the first detector D1 of thecombination order L0,1 and L1,−1, and detection by the second detectorD2 of the combination order R0,1 and R1,−1. As is schematicallydepicted, the walls 18,19 act to reflect only these combination ordersto the detectors D1, D2. The reflective walls 18,19 are sized andpositioned such that they do not reflect other diffraction orders L0,0,L1,0, R1,0 and R0,0 to the detectors D1, D2 but instead allow these topass without reflection. Thus, only the combination orders L0,1, L1,−1,R0,1, R1,−1 are incident upon the detectors D1, D2 (other orders arefiltered out by the reflective walls 18,19). No optics are needed tofocus radiation onto the detectors D1, D2 because the projection systemalready provides focusing of the radiation. Due to the reflection whichoccurs at the wafer grating WG, each combination order is detected atthe same side as the pole of incident radiation which generated thatcombination order. Thus, the left hand pole L generates a combinationorder L0,1, L1,−1 which is detected by the left hand detector D1, andthe right hand pole R generates a combination order R0,1, R1,−1 which isdetected by the right hand detector.

The detectors D1, D2 are configured to detect the intensity of incidentradiation (there is no need for the detectors to be imaging detectors).Since the phase of interference in the combination orders L0, L1, R0, R1changes as a function of the position of the wafer grating WG, intensitysignals output from the detectors D1, D2 may be used to measure theposition of the wafer grating.

Movement of the wafer W will change the phase of the interference in thecombination order L0,1 and L1,−1 and will also change the phase of theinterference in the combination order R0,1 and R1,−1. As is explainedfurther below, movement in the X-direction will cause the phase ofinterference in the combination orders to change with the same sign,whereas movement in the Z-direction will cause the phase of interferencein the combination orders to change with opposite signs.

Another way of considering the same effect is with reference to relativealignment between the wafer grating WG and an aerial image of the maskgrating MG. Movement of the wafer grating in the X-direction will causethe relative alignment of the wafer grating and the aerial image of themask grating to change in the same manner for both detectors D1, D2.However, the aerial image of the mask grating MG generated by each poleL,R is tilted with respect to the optical axis, the tilt of the aerialimage generated by the left pole L having an opposite sign from the tiltof the aerial image generated by the right pole R. As a result, movementin the Z-direction of the wafer grating will change the relativealignment between the wafer grating and the mask grating aerial imagesto change with opposite sign.

FIGS. 6 and 7 show the results of a simulation of the apparatus andmethod shown in FIGS. 3-5. FIG. 6 shows the form of the mask diffractiongrating and the wafer diffraction grating which were used in thesimulation. The mask diffraction grating is a transmissive amplitudegrating with a period of 215 nm. This is calculated based on theequation:p=3λ/2/NAwherein p is the period of the grating, λ is the wavelength of theradiation beam (in this case 193.3 nm) and NA is the numerical apertureof the projection system (in this case 1.35). The numerical apertureforms part of the calculation used to determine the mask grating periodbecause this is the mechanism by which the number of diffraction orderswhich are captured by the projection system and used by the method isdetermined. The period of the mask grating is selected such that threediffraction orders (i.e. 0, 1 and 2) could pass through the projectionsystem where as higher orders (3, 4, etc) do not pass through theprojection system. The period of the mask grating is expressed in termsof its equivalent size at wafer level, i.e. as imaged by the projectionsystem onto the wafer (as is conventional). If the reduction factor ofthe projection system were 4× then the absolute period of the grating inthis example would be 860 nm (i.e. as measured at the mask side of theprojection system).

Also represented in FIG. 6 is the wafer grating. This is a reflectivephase grating and has a period of 430 nm, i.e. double the period of themask grating. The reflective phase grating is formed in the wafer byetching the grating into the wafer (as explained further below).

The simulation applied a dipole illumination mode at a wavelength of 193nm to the mask grating and applied the resulting diffracted radiation tothe wafer grating. The results of the simulation are shown in FIG. 7.FIG. 7 represents in a pupil plane the incident radiation and resultingdiffracted radiation and can be seen to generate an output whichcorresponds with the output shown in FIG. 5. The incident radiation L, Ris indicated by dotted lines. Considering first the left hand incidentpole L, the mask grating generates zero order diffraction L0, firstorder diffraction L1, second order diffraction L2 and third orderdiffraction L3. The third order diffraction L3 falls outside of thenumerical aperture of the projection system (the numerical aperture isidentified by solid lines NA). The second diffraction order L2 isblocked by wall 19 (identified by a dotted line). Turning to the righthand pole of the illumination mode, four diffraction orders R0-R3 aregenerated, the second order being blocked by wall 18 and the third orderfalling outside of the numerical aperture NA of the projection system.

In FIG. 7 for ease of illustration the swapping over between sides ofthe diffraction orders upon passing through the mask grating and upondiffraction by the wafer grating is omitted. The zero and firstdiffraction orders generated from the left hand pole are diffracted suchthat they form combination order L0,1, L1,−1. Similarly, the zero andfirst diffracted orders of the right hand pole are diffracted by thewafer grating to form combination order R0,1, R1,−1. The walls 18,19have an angular extent which corresponds with the combination ordersL0,1, L1,−1, R0,1, R1,−1 and thus reflect the combination orders todetectors (whilst filtering out other unwanted orders).

The incident radiation poles L,R are smaller in angular size than theradiation wavelength divided by the period of the mask grating MG. As aresult, the diffraction orders which are generated by the mask gratingMG are under-filled. In FIG. 7, the combination orders L0,1, L1,−1,R0,1, R1,−1 are underfilled and thus do not extend fully to edges of thewalls 18,19. This is advantageous because it allows for some positiontolerance between the walls 18,19 and the mask grating MG, whilstensuring that all the radiation within the combination orders isreflected by the walls to detectors. This allows the intensity of thecombination orders to be detected accurately following reflection fromthe walls 18,19. If a misalignment between the walls 18,19 and the maskgrating MG occurs which is greater than the tolerance provided byunderfilling of the diffraction orders then this will be apparent fromnonlinearities in the signals output from the detectors. The principleof underfilling diffraction orders in order to provide some positionaltolerance may be used in connection with any of the embodiments of theinvention.

The simulation output shown in FIG. 7 was generated by ‘phase stepping’the position in the X-direction of the wafer grating relative to themask grating. The term ‘phase stepping’ is intended to mean thatmovements in the X-direction were made, the movements being sufficientlysmall that small changes of the phase of radiation intensity in thecombination orders can be measured (in this context a small change ofphase may be interpreted as meaning a change of phase which issignificantly less than a phase period). Measurements were obtained foreach phase step over a full period of the wafer grating. Individualmeasurement positions are indicated by crosses in FIG. 6. In thesimulation all phase stepping measurements were obtained within oneperiod of the wafer grating. However, this is not necessarily the casein practice. Phase stepping measurements can be obtained over manyperiods. (e.g. ten steps with a step size of (0.1+k)p, where k equalsany integer and p the period of the wafer grating). In other words, itis not necessary that all measurements are performed over a singleperiod of a grating. Instead, measurements may be spread out over aplurality of periods of the grating (with one or more measurements beingperformed per period of the grating).

FIG. 8 shows the simulated intensities of the combination orders as afunction of relative phase in the X-direction of the mask grating andthe wafer grating. The wafer grating was moved in an iterative mannerfrom a nominal initial position and the intensity of the resultingcombination order was determined by the simulation. The image of themask grating at the wafer has a sinusoidal modulation because only twodiffraction orders are used to form the image (the zero and firstorders). Thus, when the wafer grating is moved beneath the mask gratingaerial image a sinusoidal modulation is observed. The phase of themodulation relates to the X & Z position of the wafer (and hence the X &Z position of a wafer table which supports the wafer). Three differentsine waves are shown in FIG. 8, the first sine wave 20 was generatedwith the mask and wafer gratings having the relative positions shown inFIG. 6, the second sine wave 21 was generated with the starting positionof the wafer grating having been displaced by 43 mm in the X-directionand the third sine wave curve 22 was generated with the startingposition of the wafer grating having been displaced by 43 mm in the−X-direction.

The period of the sine waves 20-22 is half the period of the wafergrating (the period is 215 nm). The first combination order (i.e. thesignal seen at the first detector D1) varies with the same sign as thesecond combination order (i.e. the signal seen at the second detectorD2). This is clear from FIG. 8 because only one sine wave is seen foreach nominal initial position of the wafer grating. Thus, changing theposition in the X-direction of the wafer grating will cause bothdetectors D1, D2 to detect a change of phase which varies with the samesign. This is because the intensity of the signal at the detectors D1,D2depends upon the extent to which bright lines of the imaged mask gratingoverlap with reflective portions of the wafer grating (which does notvary for different detectors).

FIG. 9 shows the effect of moving the wafer grating out of the focalplane of the projection system. A first sine wave 24 is generated byphase stepping the wafer grating in the X-direction when the wafergrating is in the focal plane of the projection system. As may be seen,this first sine 24 wave corresponds with the first sine wave shown inFIG. 8 (the detectors D1, D2 both receive the same signal). When thewafer grating is located 39 nm below the focal plane of the projectionsystem a pair of sine waves 25 a,b is seen. In this case the firstcombination order (as seen by a first detector D1) is a first sine wave25 a and the second combination order (as seen by a second detector D2)is a second sine wave 25 b. As can be seen, the first and second sinewaves 25 a,b are spaced by equal amounts either side of the sine wave 24that was generated when the grating was in the focal plane. Thus, movingthe wafer grating out of the focal plane generates a phase offset whichhas an opposite sign for each combination order. The phase offset whichis observed arises from interference between constituent parts of thecombination orders L0,1, L1,−1, R0,1, R1,−1. This interference arisesbecause the incident radiation L0, L1, R0, R1 which forms thecombination orders has different angles of incidence (leading todifferent angles of tilt of the mask grating aerial image in theZ-direction). The sign of the phase is opposite for each combinationorder because the radiation is incident from opposite directions (andhence the angle of tilt has an opposite sign).

A second pair of sine waves 26 a,b is also shown for a displacement ofthe wafer grating 77 nm below the focal plane. This pair of sine waves26 a,b is again equally spaced either side of the focal plane sine wave24, again showing that the combination orders have phase offsets withdifferent signs. The observed phase difference is proportional to theapplied defocus (i.e. is proportional to the distance from the focalplane of the projection system).

As will be appreciated from FIGS. 8 and 9, since an offset in theX-direction will give rise to signals at the detectors D1, D2 with thesame phase, whereas a displacement in the Z-direction will give rise tosignals with opposite phase, an X-direction offset can be distinguishedfrom a Z-direction displacement. A difference used to measure theZ-direction displacement may be determined by subtracting two signalsoutput from two detectors D1, D2 at the same time. Alternatively, adifference used to measure the Z-direction displacement may bedetermined by subtracting two signals output from a single detector D1or D2 at different times.

In an embodiment, the mask substrate S may be provided with a secondmask grating which extends in the Y-direction and may further beprovided with a second pair of detectors and associated mirrors. Agrating extending in the Y-direction may also be provided on the wafer.Thus, positions in the Y-direction may be measured in addition topositions in the X-direction.

When measuring positions in the Y-direction, movement of the wafer whichincludes a component in the Y-direction is required. This may bemovement of the wafer exclusively in the Y-direction. Alternatively, itmay be movement of the wafer in some other direction which includes aY-direction component, in which case the detected phase will varyproportionally to the projection of the movement in the Y-direction. Themovement may be orthogonal to the Z-direction. Similarly, when measuringpositions in the X-direction movement of the wafer which includes acomponent in the X-direction is required. The movement may be orthogonalto the Z-direction.

Movement in the Z-direction may also be used to generate signals at thedetectors which allow position sensing. However, such movement does notallow positions across the surface of the wafer to be measured and thusis not preferred.

In an alternative embodiment, as described below, the mask sensorapparatus may be provided with a two-dimensional grating and detectorswhich are orientated at 45 degrees relative to the X and Y directions(where the Y-direction is the scanning movement direction of thelithographic apparatus). This allows simultaneous measurements of thewafer grating position in the X,Y and Z directions to be obtained. Ingeneral, any movement which includes a component which lies in theX-direction and a component which lies in the Y-direction may be used toobtain measurements of grating position in the X,Y and Z positions.

The left hand side of FIG. 10 schematically illustrates a mask sensorapparatus which, instead of comprising a single mask grating andassociated detectors, comprises a plurality of mask gratings andassociated detectors (MS1-MS7), each of which may be referred to as amodule. The mask sensor apparatus is viewed from below, and comprises amask substrate S (e.g. formed from quartz) upon which seven modulesMS1-MS7 are provided. Five of the modules MS1-MS5 are provided at thecentre of the mask substrate S, with additional modules MS6, MS7 beingprovided at edges of the mask substrate S. In use, at a given moment intime the seven modules MS1-MS7 each measure the X,Y and Z position ofthe same wafer grating. The wafer grating extends sufficiently far inthe X and Y directions that the mask grating aerial image formed fromeach module MS1-MS7 is incident upon that wafer grating. The wafergrating may for example extend across substantially all of the wafer.The wafer is moved relative to the projection system in a phase-steppingmanner (as described above) such that each module MS1-MS7 measures theX,Y,Z position of the wafer grating for a variety of positions of thewafer. This provides a plurality of measurements which together may beused to distinguish between a deviation of the wafer grating from adesired location on the wafer and an error in the positioning of thewafer.

Distinguishing between deviation of the wafer grating from a desiredlocation on the wafer and an error in the positioning of the wafer canbe achieved by monitoring both the positions measured by the modules andthe separation between those measured positions. For example,considering the Y-direction, during a single measurement cycle threemodules MS1, MS2, MS4 measure the position of the wafer grating. Thesepositions may be referred to as P1, P2 and P3. The controller CT (seeFIG. 1) or some other processor measures the separation between thesemeasured positions. The measured separations may be referred to as ΔP1,2and ΔP2,3. Unlike the measured positions P1-P3 the measured separationsΔP1,2 and ΔP2,3 are independent of errors in the positioning of thewafer (this is because they are different measurements rather thanabsolute position measurements). Similarly, considering the X-direction,measurements of the wafer grating position and separation measurementsare performed.

The separation measurements are used to create a map of the wafergrating which maps deviations of the wafer grating from desiredlocations across the surface of the wafer. The map may comprise vectorswhich indicate the direction and amplitude of wafer grating deviationsacross the surface of the wafer.

Once the map of wafer grating deviations has been determined, the wafergrating deviations can be subtracted from the positions measured usingthe modules MS1-MS7. This removes the effect of the wafer gratingdeviations from the measured positions, such that the resulting measuredpositions depend solely on errors in the positioning of the wafer. Thus,a map of wafer positioning errors is thereby obtained. The map may be inthe form of vectors, the vectors indicating the direction and amplitudeof the positioning errors (which may also be referred to as waferwriting errors). At each wafer position (x,y) the vector has threeproperties dX(x,y), dY(x,y), dZ(x,y) and thus is a vector in threedimensions.

As noted above, two of the modules MS6, MS7 are provided at edges of themask substrate S of the mask sensor apparatus. Providing these modulesMS6, MS7 with a relatively large separation in this manner isadvantageous because it improves detection of low frequency changes ofthe height of the wafer grating. That is, the signal to noise ratioprovided for such low frequency changes (e.g. a change which occurs overa few mm or even cm) is improved. Although modules MS6, MS7 are shown asbeing provided at edges of the mask substrate, they may for example beprovided at or adjacent to edges of the mask substrate. In general, thegreater the separation between the modules MS6, MS7 the better thesensitivity to low frequency changes of the wafer grating height. A lowfrequency change of the wafer grating height may equivalently be thoughtof as a tilt of the wafer grating about the Y-direction.

Providing two modules MS6, MS7 at or adjacent to edges of the masksubstrate S also improves the signal to noise sensitivity of the masksensor apparatus to rotation of the wafer grating about the Z-directionand expansion (or contraction) of the wafer grating in the X-direction.

The modules MS1-MS7 can be positioned such that they all measure thesame (relative) phase. That is, for a given measurement cycle (i.e. asingle measurement by each module) each module would generate the sameoutput if there was no deviation of the wafer grating and no error inthe positioning of the wafer. In general, three measurements of a sinewave are needed in order to determine the amplitude and phase of thesine wave. Since the modules MS1-MS7 are measuring sine-wave signals (asexplained in connection with FIGS. 8 and 9) three or more measurementsare required in order to characterise the measured sine wave.

In an alternative embodiment, three modules (e.g. MS1, MS3, MS5 or MS1,MS2,MS4) can be positioned such that they perform measurements which are120 degrees out of phase (relative to each other). That is, they arepositioned such that if there was no deviation of the wafer grating andno error in the positioning of the wafer then they would generateoutputs 120 degrees out of phase of each other. In such an embodiment asingle measurement cycle (i.e. a single measurement by each module)provides enough information to characterise the measured sine wave.Thus, a single measurement cycle provides a wafer grating measurement inthe X,Y and Z directions.

An alternative embodiment of the mask sensor apparatus is shown on theright hand side of FIG. 10. In this alternative embodiment three modulesMS1A-MS3A are located at the centre of the mask substrate S andseparated from each other in the Y-direction (i.e. the scanningdirection of the lithographic apparatus). The separation between eachadjacent module MS1A-MS3A may correspond with a 120 degree relativephase offset. Three modules MS4A-MS6A are located along or adjacent toone edge of the mask substrate S and three modules MS7A-MS9A are locatedalong or adjacent to an opposite edge of the mask substrate.

In each case the separation between each adjacent module MS4A-MS6A,MS7A-MS9A may correspond with a 120 degree relative phase offset. Theembodiment shown on the right hand side of FIG. 10 allows measurement ofthe wafer grating position with three degrees of freedom X,Y,Z andmeasurement of the wafer grating rotation with three degrees of freedomRx, Ry & Rz to be performed in a single measurement cycle.

In general terms, in order to determine the phase of an oscillatingsignal (such as the signals shown in FIGS. 8 and 9) multiple intensitymeasurements with different wafer to mask alignments are needed. Threeparameters are fitted to the oscillating signal: offset, modulation &phase. It is for this reason that three intensity measurements areneeded (e.g. separated by 120 degrees).

The intensity measurements may be sequential (same detector over time)or in parallel (multiple detectors at a single time). In the latter casea plurality of detectors are needed. A wafer table has six degrees offreedom (X,Y,Z, Rx, Ry, Rz) and at least three measurements are neededfor each degree of freedom. Thus, there are at least 18 unknowns. Eachmodule provides three independent intensity signals (the fourth signalis redundant). Thus, at least six modules may be required in order tomeasure all degrees of freedom of the wafer table simultaneously.

FIG. 11 schematically shows one mask grating and detector module in moredetail. From FIG. 11 it may be seen that the mask grating MG isorientated at 45 degrees relative to the X and Y axes, and similarly thedetectors D1-4 are also oriented at 45 degrees relative to the X and Yaxes. As is explained further below, orienting the mask grating MG andthe detectors D1-4 in this manner allows both X and Y positions of thewafer grating to be measured during phase stepping of the wafer.

Each module of the mask sensor apparatus further comprises a tower 30which extends downwardly from the mask substrate S. The tower comprisesfour walls, one of which 31 is shown viewed from one side in FIG. 11.The wall 31 is provided with an opening 32 which is dimensioned to allowtransmission of radiation propagating diffracted by the mask grating MGover a predetermined range of angles. The wall 31 has a reflectivesurface 33 below the opening 32 which in use reflects a combinationdiffraction order. Referring to FIG. 11 in combination with FIGS. 3 and5, it can be seen that in an embodiment the opening 32 may allow fortransmission of an incident zero diffraction order L0 (or R0) and thereflective surface 33 may reflect a combination order L0,1, L1,−1 (orR0,1, R1,−1). The wall 31 may also block transmission of an incidentsecond diffraction order L2 (or R2).

Appropriate dimensions and positioning of the opening 32 may be selectedusing trigonometry. The tower 30 may extend downwardly from the masksubstrate S by for example 6 mm (this depth may be provided in thelithographic apparatus to accommodate a pellicle during normal use). Asexplained further above in connection with FIG. 3, the tower 30 isconfigured to block second order diffraction generated by the maskgrating MG. The range of angles which corresponds with second orderdiffraction in this embodiment lies between ⅓ and ⅔ of the numericalaperture NA of the projection system. In this embodiment the numericalaperture of the projection system is 1.35/4 (the division by 4 is totake account of the reduction factor of the projection system). Thus,the range of angles to be blocked is calculated as:⅓*1.35/4<sin(θ)<⅔*1.35/4=>6.46°<θ<13°

Since the height of the tower is 6000 μm, the lateral separation d ofthe tower wall from the centre of the mask grating is calculated as:d=6 tan(6.46°)=679 μm.

As can be seen with reference to FIG. 5, the tower 30 is configured toreflect the combination order which is to be incident upon a detector.The combination order has the same range of angles as indicated above,i.e. 6.46°<θ<13°. It is desirable for the wall of the tower to reflectover this range of angles without reflecting other angles, in order tofilter out diffraction orders which should not be incident upon thedetector. The opening 32 may thus begin at a position h (measured fromthe mask substrate) which corresponds with θ=13°. This is calculated as:h=679/tan(13°)=2942 μm.An upper end of the opening may be positioned at 1895 μm from the masksubstrate to block radiation which is diffracted at θ>19.7°.

Referring again to FIG. 2, in use the mask sensor apparatus MS isilluminated with a radiation beam PB and then a wafer W upon which awafer grating WG has been provided is moved beneath the projectionsystem PL. The wafer may for example follow a route which allows thepositions of the wafer grating across substantially the entire wafer tobe measured. An example of such a route is schematically illustrated inFIG. 12. In FIG. 12 movement of the wafer W is indicated by arrows 40.As can be seen, the movement comprises a series of linear movements inthe Y-direction which are separated from each other in the X-direction.Changes of direction and movement in the X-direction take place when thewafer is not being illuminated by the radiation beam, so that onlyY-direction movement occurs when the wafer is illuminated by theradiation beam. The wafer may be moved incrementally, with a measurementbeing performed after each movement (these movements may be referred toas phase steps). The movements and measurements may be synchronised withlaser pulses which form the radiation beam. Alternatively, the wafer maybe moved with a continuous scanning motion, the output of the detectorsbeing sampled at a rate which is sufficiently fast to allow phasemeasurements to be obtained.

In an alternative arrangement instead of performing measurements whichare synchronised with the laser pulses, measurements may be taken fromthe detectors continuously and sampled into discrete ‘measurement bins’using electronics. The rate at which this sampling takes place may bedetermined by control electronics and may be independent of thefrequency of the laser pulses. Thus, in the resulting discreetmeasurements, each measurement will either be a finite intensitymeasurement (for discreet measurements which occurred when the laser wason) or will be zero intensity (for discreet measurements which occurredwhen the laser was off). An advantage of using this arrangement is thata plurality of discreet measurements may be sampled during a singlelaser pulse, thereby allowing more information to be obtained than wouldbe the case if a single measurement per laser pulse were to beperformed. This in turn allows the wafer table to be moved more quicklythan may otherwise be the case. A further advantage is that there is norequirement to link the laser electronics to the measurement electronicsin order to achieve synchronisation.

In an embodiment the separation between adjacent measurements may be 1(i.e. a measurement is performed every 1 mm). The separation in theX-direction between adjacent scans may for example also be 1 mm. Otherseparations in the X and Y-directions may be used, and this may dependupon the fineness or coarseness of a wafer positioning error map that isdesired.

In an embodiment, instead of performing measurements every 1 mm (or someother relatively finely spaced separation) measurements may be performedonly at positions which correspond to exposure positions duringsubsequent use of the lithographic apparatus. For example, if thelithographic apparatus will be used to expose dies which are 26 mm by 33mm, measurements may be performed at positions which correspond only topositions that will subsequently be used during exposure of dies. Inthis example, a separation of 26 mm in the X-direction between adjacentscans may be used. This approach provides the advantage that positionerrors are measured only at positions which will subsequently be usedduring wafer exposure. This reduces the number of measurements which arerequired and thereby reduces the time required. It also allowsmeasurement to be obtained of inter-field misalignments arising forexample from wafer expansion and rotation for dies exposed at thosepositions. Higher order inter-field corrections may also be applied. Asix degree of freedom intra-field correction may be applied duringscanning exposure of the die (based upon measurements obtained using theembodiment of the invention).

FIG. 13 represents schematically a mask diffraction grating MG whichextends in the X and Y directions (and thus has a form which may bereferred to as a checker-board). When a mask diffraction grating MG ofthe type shown in FIG. 13 is used a wafer grating having a correspondingform may be used (e.g. with a period which is double the period of themask grating). The wafer grating may extend across substantially anentire wafer. This does not preclude other marks such as alignment marksalso being on the wafer (e.g. in gaps provided in the wafer grating).The mask diffraction grating generates diffraction orders in directionsillustrated by the arrows. That is, diffraction in the X=Y directionoccurs and diffraction in the X=−Y direction occurs. Quadrupoleillumination is used for this embodiment (e.g. as schematicallyillustrated in FIG. 14 below). Referring again to FIG. 10, the masksensor apparatus MS can be used to simultaneously measure with fourdetectors D1-4 the relative alignment of the mask and wafer gratings,and also the displacement in the Z-direction away from the focal planeof the wafer grating. This may be achieved by moving the wafer in themanner shown in FIG. 12 whilst monitoring the outputs of the detectorsD1-D4.

FIG. 14 illustrates schematically a problem which may occur when agrating which gives rise to diffraction in orthogonal directions (e.g. achecker-board grating) is used. FIG. 14 schematically shows in a pupilplane how unwanted mixing between diffraction orders can take place. Aquadrupole illumination mode comprising four poles 51-54 is used toilluminate a mask grating. Radiation is diffracted as zero diffractionorders 51-54 and a first diffraction order 50. As is schematicallyindicated by the arrows in the figure, this radiation is diffracted inorthogonal directions (X=Y and X=−Y) by a mask grating (which also has achecker-board form). As a result, +/−first diffraction orders of poles50 & 53 mix together to form a combination order 57, +/−firstdiffraction orders of poles 50, 52 mix together to form a combinationorder 56, etc (combination orders 55-58 are indicated by patterneddisks). However, in addition, some radiation will be diffracted inunwanted directions. For example, as illustrated by arrows 59,60 someradiation will be diffracted pole 53 as a first order in the X=Ydirection and as a second order in the X=−Y direction (and vice versa).As a result, the radiation from this pole 53 will mix in an unwantedmanner with combination diffraction orders 56,58.

The unwanted mixing of diffracted radiation will affect in anundesirable manner the signals detected at the detectors D1-4 of themask sensor apparatus MS. Although a linear relationship betweendetected phase and X and Y displacement will remain, the relationshipbetween phase and displacement from the lens focal plane in theZ-direction will no longer be linear. Various solutions to this problemare possible. A first solution is to measure the non-linear response andthereby obtain a calibration of the signals which takes the non-linearresponse into account. This may be done by stepping the wafer grating inthe X-direction only and measuring the signals output by the detectors,stepping the wafer grating in the Y-direction only and measuring thesignals, and stepping the wafer grating in the Z-direction only andmeasuring the signals.

An alternative approach is to provide the wafer gratings as separategratings which extend in orthogonal directions. Where this is done,position measurements in the X and Z directions may be obtained usingthe wafer grating which extends in the X-direction. Positionmeasurements in the Y and Z directions may separately be obtained usingthe wafer grating which extends in the Y-direction. When this approachis used the mask grating may be a two-dimensional grating and the masksensor apparatus may comprise four detectors. The detectors do not seethe unwanted mixing between diffraction orders illustrated in FIG. 14.This is because during measurement using wafer gratings which extend inthe X-direction no diffraction orders with Y-direction components areseen, and similarly during measurement using wafer gratings which extendin the Y-direction no diffraction orders with X-direction components areseen.

A further alternative approach is to provide separate gratings whichextend in orthogonal directions (e.g. the X and Y directions) on thereticle and a grating which extends in both directions (e.g. the X and Ydirections) on the wafer. If the wafer has a one-to-one duty cycle anddouble the period of the reticle grating then each detector will onlysee two interfering orders (e.g. as shown in FIGS. 3-5). A disadvantageof this approach compared with using separate X and Y direction gratingson the wafer is that the mask sensor apparatus associated with theX-direction mask grating must be separate from the mask sensor apparatusassociated with the Y-mask grating (i.e. two mask sensor apparatus areneeded).

A further alternative solution is described below. This may be apreferred solution because it does not require extra measurement scansand does not require calibration of a non-linear response. Two or moreof the solutions may be combined together.

In an embodiment, the mask sensor apparatus MS may be arranged such thatthe openings in the tower are laterally offset (i.e. offset in the planeof the mask substrate S). The poles of the illumination mode used toilluminate the mask sensor apparatus may be correspondingly offset. Thismay allow the above problem to be reduced or avoided completely. FIG. 15illustrates schematically one way in which this can be achieved. Thefigure shows schematically in a pupil plane different diffraction orderswhich are used to generate a detected signal. Illumination is providedby an offset quadrupole mode radiation beam (described further below).The poles have a sigma of between approximately 1/3.2 and around 2/3.2.One pole is diffracted by the mask grating to form a zero order R0 and afirst order R1. Interference at a wafer grating between these two ordersR0,R1 generates a combination order R0,2, R1,−1. Unlike in theembodiment described further above, the period of the wafer grating isthe same as the period of the mask grating, and generates a combinationorder which does not lie in-between the existing diffraction orders butinstead is to one side of the existing orders. As indicated by thenotation, one of the orders R0,2 of the combination order is a secondorder diffraction of incident zero order radiation R0. The other orderR1,−1 of the combination order is a first order diffraction of incidentfirst order radiation R1. The intensity of the combination order R0,2,R1,−1 is detected by a detector D1 and is used to measure the X,Y,Zposition of the wafer grating in the same manner as described above.Thus, the detector detects radiation which is diffracted twice in afirst order and detects radiation which is diffracted in a zero orderand a second order. Using this combination of diffraction orders isadvantageous because it allows optimization of the diffraction gratingssuch that the intensity of both orders which form the combination orderis equal. As a result the radiation detected will have 100% contrast.

As can be seen from FIG. 15, the combination order R0,2, R1,−1 which isdetected by the detector D1 is generated by diffraction in the X=−Ydirection. A second detector D2 is also arranged to measure acombination order generated by diffraction in the X=−Y-direction.However, the pole which is used to generate diffraction detected by thesecond detector D2 is offset in the X=Y-direction from the pole used togenerate diffraction detected by the first detector D1. The maskdiffraction grating generates zero order diffraction RA0 and first orderdiffraction RA1. The wafer diffraction grating then generates acombination order RA0,2, RA1,−1 which is detected by the second detectorD2. This second combination order RA0,2, RA1,−1 is offset in theX=Y-direction from the first combination order R0,2, R1,−1 detected bythe first detector D1. The first combination order R0,2, R1,−1 isselectively reflected to the first detector D1 by a laterally offsetwall of the tower (other diffraction orders are filtered out by thewall) as described below. Similarly, the second combination order RA0,2,RA1,−1 is selectively reflected to the second detector by a laterallyoffset wall of the tower (other diffraction orders being filtered out bythe wall).

In exactly the same way, diffraction orders are generated using poleswhich are offset in the X=Y-direction, the diffraction orders beingdetected by detectors D3, D4 which are offset in the X=−Y direction.These orders are not labelled in FIG. 15 to avoid over complicating thefigure.

When the embodiment depicted in FIG. 15 is used, the problem illustratedby FIG. 14 is reduced or eliminated. As a result, the phase of thesignal detected at the detectors D1-D4 varies linearly as a function ofthe z-position of the wafer grating.

FIG. 15 is a simplification in the sense that it does not show theeffect of the mirroring of the diffraction orders relative to theoptical axis upon wafer reflection. (this was done in order to avoidover complicating FIG. 15). FIG. 16 illustrates schematically the effectof the mirroring. The optical axis OA, indicated by a disk, extends inthe Z-direction (i.e. directly out of the plane of the figure). Theillumination mode pole has a sigma of between approximately 1/3.2 andaround 2/3.2 and is offset from the optical axis OA in the −X=−Ydirection. The pole is diffracted by the mask grating to form a zeroorder R0 and a first order R1. These propagate through the projectionsystem PL of the lithographic apparatus and are then diffracted by thewafer grating WG (see for example FIG. 2). Because the diffractionorders R0 and R1 are off-axis, when they are diffracted by the wafergrating WG the resulting diffraction orders are also off-axis but on anopposite side of the optical axis OA. Thus, the resulting combinationorder R0,2, R1,−1 is mirrored in the optical axis to the incidentdiffraction orders R0, R1. The detector D1 is positioned to receive thecombination order R0,2, R1,−1 and is thus also mirrored in the opticalaxis relative to the incident diffraction orders R0, R1.

Similar displacements of detectors relative to illumination mode polesare used for the other illumination mode poles.

FIGS. 17-20 illustrate schematically the generation and detection of thecombination order R0,2, R1,−1 shown in FIGS. 15 and 16. FIG. 17 shows amask grating MG which comprises squares separated by channels which arenarrower than the squares. Thus, the mask grating MG does not have aone-to-one duty cycle and will generate some even diffraction orders. Inan alternative arrangement the channels may be wider than the squares.

Referring to FIG. 18, the mask grating MG is shown on a mask substrateS. Also provided on the mask substrate S is a tower, of which two walls46, 47 are visible in FIG. 16. One of the walls 46 has a reflectiveouter surface which acts as a mirror. The mask grating MG is illuminatedwith a radiation beam pole R which has an intermediate sigma. The maskgrating MG diffracts the radiation beam pole and generates a zerodiffraction order R0 and a first diffraction order R1. Other diffractionorders may be generated but these are blocked by the walls 46,47. Thewall 47 on the right hand side of the tower is shorter than the wall 46on the left hand side of the tower (in the plane shown in FIG. 17),thereby providing an opening 51 which allows transmission of the zerodiffraction order R0. As is explained further below, the opening 51 isoffset relative to the optical axis. Thus, the plane of FIG. 18 does notcorrespond with the optical axis. Instead, the plane of FIG. 18 liesbehind a plane in which the optical axis lies.

FIG. 19 shows a wafer W provided with a wafer grating WG. The wafergrating WG has the same period as the mask grating MG and thus willgenerate diffraction orders with the same angular separation. Again, thewafer grating does not have a one-to-one duty cycle and will generatesome even diffraction orders. The zero diffraction order R0 and thefirst diffraction order R1 are incident upon the wafer grating WG. Thezero diffraction order R0 is diffracted by the wafer grating WG as azero order R0,0 and a second order R0,2. The first diffraction order R1is diffracted by the wafer grating WG as a zero order R1,0 a first orderR1,−1. Other diffraction orders may be generated but are notillustrated. A combination order R0,2, R1,−1 is formed.

FIG. 20 shows the combination order R0,2, R1,−1 being reflected by areflective surface of the tower wall 47. The combination order R0,2,R1,−1 is reflected by the wall 47 to a detector D1 where the intensityof the combination order is measured. The wall 47 does not reflect otherdiffraction orders, thereby ensuring that only the combination orderR0,2, R1,−1 is incident upon the detector D1. The plane of FIG. 20 isdifferent from the plane of FIG. 18—the plane has been stepped upwardsout of the plane of the paper. This is due to the off-axis nature of theillumination pole, as was described above in connection with FIG. 16.Due to the off-axis nature of the illumination, portions of the towerwalls 46,47 which block diffraction orders generated by the mask gratingMG are different from portions of the tower wall which reflectdiffraction orders generated by the wafer grating WG.

FIGS. 21-23 illustrate the tower which forms part of this embodiment ofthe invention. FIG. 21 shows the tower viewed from below, FIG. 22 is across-sectional view of the tower along line AA′, and FIG. 23 shows thetower in perspective view. Referring first to FIGS. 21 and 22, the toweris formed from four walls 46-48. Each wall is provided with an opening50-53 which extends from a lowermost end of the tower (i.e. the endopposite the mask substrate which supports the tower) and ends partwayup the tower. Each opening is offset from the centre of the wall inwhich it is provided. The purpose of this offset can be understood fromFIG. 18. In that figure the opening 51 in the right-hand wall 47 allowsthe zero diffraction order R0 to pass so that it can be incident uponthe wafer grating. The portion of the right-hand wall 47 which is abovethe opening in FIG. 21 (i.e. the portion through which the dashed linepasses) is not provided with an opening but instead has a reflectivesurface which acts to reflect the combination order R0,2, R1,−1 to thedetector D1 (see FIG. 20). If an opening were to be present then thecombination order would not be reflected to the detector. In general,the openings 50-53 are positioned and dimensioned such that they allowtransmission of zero order diffraction from the mask grating whilstblocking higher order diffraction from the mask grating (first ordermask grating diffraction passes out of the bottom of the tower whilstsecond orders and above are blocked by the tower). In addition, theopenings 50-53 are positioned and dimensioned such that they are offsetfrom, and do not coincide with, combination orders which are to bereflected towards detectors.

FIG. 23 is a perspective view of the tower, showing two walls 47, 48 andcorresponding openings 51, 52.

The dimensions of the tower may be in part constrained by the spaceavailable in the lithographic apparatus. For example, in an embodimentthe tower T may have a height h of 5 mm (i.e. may extend downwardly fromthe mask substrate by 5 mm). The lateral dimensions of the tower and thesize and position of the openings 50-53 may be determined based upon themodelling of the incident radiation beam, the positions and sizes ofdiffraction orders generated by the mask grating, and the positions andsizes of combination orders generated by the wafer grating. For examplethe tower may have a width w of around 2.2 mm. Each opening 50-53 mayhave a height h_(o) of around 2.5 mm and may have a width w_(o) ofaround 0.5 mm. Each opening 50-53 may extend from the centre of tower toone side of the tower (the opening ending at the inner surface of thenext wall). The walls 46-49 of the tower may have a thickness of around0.55 mm.

The tower may be formed from quartz, metal or any other suitablematerial. The material may be sufficiently conducting of heat to avoiddamage being caused by radiation that is absorbed by the tower.

The tower, in combination with the offset illumination mode poles,avoids detection by the detectors D1-D4 of unwanted diffractioncombinations (e.g. those depicted in FIG. 14). As a result, the signalsseen at the detectors D1-D4 vary linearly as a function of wafer gratingdistance from the focal plane of the projection system.

FIG. 24 schematically illustrates a further alternative embodiment ofthe invention. The format of FIG. 24 corresponds with the format of FIG.15, i.e. the positions of diffraction orders and detectors arerepresented schematically in a pupil plane and the effect of the offsetrelative to the optical axis is not shown. In FIG. 24 incident radiation(and hence also zero order diffracted radiation) again has anintermediate sigma (between 1/3.2 and 2/3.2). In this embodiment howeverthe detectors D1-D4 are located close the centre of the pupil. Takingone pole as an example, zero order diffraction R0 and first orderdiffraction R1 are generated by a mask grating. A combination order R0,1R1,−1 is generated by a wafer grating and is incident upon a detector D1close to the centre of the pupil. Similarly, considering thecorresponding (laterally offset) pole, zero order diffraction RA0 andfirst order diffraction RA1 are generated by a mask grating. Acombination order RA0,1 RA1,−1 is generated by a wafer grating and isincident upon a detector D2. The embodiment shown in FIG. 24 may beconsidered to be less advantageous than the previously depictedembodiment because it may be difficult in practice to locate fourdetectors D1-D4 adjacent to each other. This may be addressed forexample by positioning mirrors instead of detectors in the locationslabelled D1-D4 and orienting the mirrors such that each mirror directs adifferent combination order to a different detector located at othersuitable positions on the mask substrate of the mask sensor apparatus.

FIG. 25 illustrates schematically the effect of using alternativeillumination modes to illuminate the mask grating. FIG. 25 is similar toFIG. 15, and detectors D1-D4 are depicted at the same locations.However, for simplicity only diffraction modes used for one detector D1are shown. As described further above an intermediate sigma pole(1/3.2-2/3.2) may be used to illuminate the mask diffraction grating,the mask diffraction grating generating zero order diffraction R0 andfirst order diffraction R1. The wafer grating will generate acombination order R0,2 R1,1 which is incident upon a detector D1. In analternative arrangement however, an illumination pole with a smallersigma (0-1/3.2) may be used to illuminate the mask diffraction grating.Where this is the case the resulting zero order diffraction RB0 and thefirst order diffraction RB1 have positions which are opposite to thoseseen for the intermediate sigma pole (achieved via selection of anappropriate mask grating period). The resulting combination orderRA0,−1, RA1,−2 generated by the wafer grating is incident at the samelocation and hence incident at the same detector D1. Thus, it will beunderstood that the same mask sensor apparatus MS with the same detectorconfiguration may be used for two different illumination modes, i.e.relatively small sigma poles (0/3.2-1/3.2) and intermediate sigma poles(1/3.2-2/3.2). Illumination using the intermediate sigma (1/3.2-2/3.2)illumination pole may be preferred because it provides a better contrastin the signal seen at the detector D1.

Illuminating the mask diffraction grating with an illumination modehaving intermediate sigma poles (1/3.2-2/3.2) is advantageous because abetter contrast of interference at detectors D1-D4 can be obtained(compared with relatively small sigma pole illumination).

The contrast of interference seen at the detectors D1-D4 depends uponthe relative amplitudes of the two diffraction orders which togetherform the combination diffraction order that is detected. Contrast ismaximised when the two diffraction orders have the same amplitudes. Theamplitudes of the diffraction orders may be optimised via selection ofthe duty cycle of the mask grating and the duty cycle of the wafergrating (the duty cycle determines the relative amplitudes of differentdiffraction orders). The wafer grating is a phase grating, with phasearising from the depth of etch of the grating into the wafer. Modifyingthe etch depth may also be used to influence the relative amplitudes ofdifferent diffraction orders.

FIG. 26 illustrates schematically a sensor apparatus 99 according to afurther embodiment of the invention. Unlike previously illustratedembodiments the sensor apparatus 99 is substantially two-dimensional (itdoes not include a tower or an equivalent structure extending downwardlyfrom a mask substrate). The sensor apparatus 99 instead takes the formof a screen which is located out of the mask focal plane of theprojection system (i.e. out of the plane in which a mask is providedduring conventional operation of the lithographic apparatus). The screenmay be located in a plane which corresponds with a plane in which apellicle would be provided during conventional operation of thelithographic apparatus. For example, the screen may be around 5 mm or 6mm below the mask focal plane. The screen comprises a radiation blockingmaterial 100 in which an opening 101 has been provided. For example, thescreen may be made from quartz provided with a reflective coating, thereflective coating being removed to provide openings through whichradiation is transmitted. Detectors D1-D4 are provided in the screen andare arranged to detect radiation travelling back up through theprojection system. The detectors D1-D4 do not detect radiationtravelling from the illumination system towards the projection systembut instead merely block such radiation. Thus, only radiation which isincident upon the opening 101 travels to the projection system.

The functionality provided by the screen 100 and the opening 101corresponds with the functionality provided by the tower shown in FIGS.21-23. In addition, relevant dimensions of the tower correspond withdimensions of the opening 101. Thus, each arm of the opening has a widthw₀ which corresponds with the width w₀ of the openings 51-53 of thetower, and the full width w of the opening 101 corresponds with thewidth w of the tower. The functionality provided by the screen 100 andopening 101 corresponds with that shown in FIGS. 17-19, i.e. zero andfirst order diffracted radiation generated by a mask diffraction gratingis transmitted whereas other orders are blocked by the screen. Thedetectors are positioned such that they detect only the combinationorder R0,2, R1,−1 (and equivalent orders), with other orders beingincident at other locations on the screen where detectors are notpresent. When this embodiment is used a mask provided with a maskgrating is also provided in the lithographic apparatus. The mask gratingmay be a few tens of microns in diameter, with the remainder of the maskbeing non-transmissive. Thus, the mask grating may have the form of apinhole which is provided with a grating. The mask grating should bepositioned relative to the mask such that desired diffraction orderspass through the opening 101 and desired combination orders are incidenton the detectors D1-D4. Underfilling of the diffraction modes viaappropriate selection of illumination radiation poles may be used toprovide some tolerance in the positioning of the mask grating relativeto the screen.

Although the embodiment shown in FIG. 26 comprises a single opening 101and four detectors D1-D4, more than one opening and associated detectorsmay be provided in the screen. For example, openings and detectors maybe provided in an arrangement which corresponds with that shown in FIG.10. Where this is the case a corresponding mask grating may be providedfor each opening.

An advantage of the embodiment shown in FIG. 26 is that it may be easierto fabricate and less prone to damage because it does not include atower.

The detectors used may be photodiodes which are located at the positionsD1-D4 shown in FIG. 26. Alternatively, optical fibres may be used totransport radiation to photodiodes located remotely from the positionsD1-D4 shown in FIG. 26. In this situation, although the detectors arenot physically located at the illustrated positions D1-D4, theynevertheless do detect radiation incident at those positions. Opticalfibres may also be used in this manner for other embodiments of theinvention. The use of optical fibres is advantageous because unlikeelectronic detectors the optical fibres will not generate heat and thusdo not give rise to thermal conditioning requirements. In addition,optical fibres may occupy a smaller volume and may be more easilyintegrated into the apparatus than electronic detectors. Embodiments ofthe invention allow positioning of the wafer table to be calibrated forsix degrees of freedom: position in the X,Y,Z directions and rotationRx, Ry, Rz about the X, Y and Z axes. Thus, for each position (X,Y) ofthe wafer table the position error in the X,Y and Z directions isdetermined and the rotation error about the X,Y and Z axes isdetermined.

Embodiments of the invention provide numerous advantages over the priorart. For example, a calibration over an entire wafer can be performed inless than an hour (e.g. in around 15 minutes), instead of requiringseveral hours to expose, develop and measure a wafer. Since thecalibration can be performed relatively quickly this allows it to beperformed more regularly without it becoming uneconomic. A calibrationcould be performed for example in advance of exposing wafers with aparticular die (or target area) layout. This is beneficial because bothinter-field and intra-field alignment may include some die layoutdependency.

References to a single wafer grating extending across substantially theentire surface of the wafer do not preclude other marks (e.g. alignmentmarks) being present on the wafer. A wafer grating which extends acrosssubstantially the entire surface of the wafer may include gaps in whichother marks may be provided.

Although embodiments of the invention have been described in terms of asingle wafer grating which extends across substantially the entiresurface of the wafer, in other embodiments other forms of wafer gratingsmay be used. For example, a plurality of separate wafer gratings may beprovided on the wafer. The plurality of wafer gratings may for examplebe provided as an array which extends across the surface of the wafer.

Although described embodiments of the invention have used either twoillumination mode poles or four illumination mode poles, other numbersof illumination mode poles may be used.

A single illumination mode pole could be used. However, where this isthe case movement of the wafer two directions is needed in order toobtain position measurement, a first direction being substantially inthe plane of the wafer (in the XY plane) and a second direction beingsubstantially perpendicular to the plane of the wafer (in theZ-direction).

Where two illumination mode poles are used, two detectors may be used,the detectors being located either side of the mask grating (e.g. asshown in FIG. 5). Where this is the case, movement of the wafer in thedirection of detector separation will provide position measurements inthat direction (and in the Z-direction) as is described above. In analternative arrangement the detectors may be located such that a firstdetector provides position measurements for movement in a firstdirection (e.g. the X-direction) and a second provides positionmeasurements for movement in a perpendicular direction (e.g. theY-direction). Where this is the case movement in the X-directiontogether with movement in the Z-direction is required in order to obtaina position measurement using the first detector. Similarly, movement inthe Y-direction together with movement in the Z-direction is required inorder to obtain a position measurement using the second detector. Foreach direction a single illumination pole may be used.

Where three illumination poles are used three detectors may be provided,two on either side of the mask grating and the other separated from themask grating in a perpendicular direction. For example, using X,Y,Znotation two detectors may be either side of the mask in the X-directionand the third detector may be separated from the mask in theY-direction. Movement of the wafer in a direction which includes X and Ycomponents will generate position measurements in the X, Y and Zdirections.

Where four illumination poles and four detectors are used, the fourthpole and detector may provide some redundancy of measurement. Forexample, using X,Y,Z notation two detectors may be either side of themask in the X-direction and two detectors may be either side of the maskin the Y-direction. The X-direction separated detectors provide positionmeasurements in the X and Z directions. The Y-direction separateddetectors provide position measurements in the Y and Z directions. Thus,Z-direction measurements are performed twice.

The intended meaning of the term ‘diffraction order’ in this documentmay be understood with reference to the diffraction grating equationbelow, which governs the positions of intensity maxima generated by adiffraction grating:D(Sin θ_(m)+Sin θ_(i))=mλwhere d is the grating period, i is the angle at which radiation isincident upon the grating, λ is the radiation wavelength and m is aninteger which can be positive or negative. Each integer valuecorresponds with a different diffraction order.

Embodiments described above are generally concerned with calibrationoperations performed prior to, or between exposure of a wafer to apattern on a mask. For example, it is described above that a calibrationcould be performed in advance of exposing wafers with a particular die(or target area) layout using a mask sensor apparatus MS. Generally,therefore, as depicted in FIG. 10, gratings are provided in a centralportion of the mask sensor apparatus and across a wafer. In anotherembodiment, calibration measurements may be obtained during an exposureoperation of the lithographic apparatus to expose the wafer to a patternfrom a mask MA. As will be evident from the preceding and followingdescription, the calibration measurements performed during an exposureoperation may be used to calibrate both the position of the wafer W andother components such as the wafer table WT.

Referring to FIG. 27, there is depicted a mask MA having a pattern 110to be imparted to the radiation beam PB. The radiation beam PB isincident on the pattern 110 of the mask MA, which is held on the supportstructure MT. Having traversed the mask MA, the beam PB passes throughthe lens PL, which focuses the beam onto a target portion of the waferW. The wafer table WT can be moved accurately, e.g. so as to positiondifferent target portions of the wafer in the path of the beam PB.

The lithographic apparatus may move the mask MA and the substrate W witha scanning motion when projecting the pattern from mask MA onto a targetportion of the wafer W. In FIG. 1 the z-direction corresponds with anoptical axis of the radiation beam PB. In an embodiment in which thelithographic apparatus is a scanning lithographic apparatus, thescanning motion is along the x-axis. In contemporary lithographicapparatus there are two directions in which the patterning device MA isscanned during exposure. The two scan directions may be referred to asscan-up and scan-down respectively as the scans typically take place inopposite directions along the same axis.

FIG. 28 schematically illustrates an example of a wafer in accordancewith an embodiment for use with in-scan calibration measurements. Thewafer W comprises a plurality of target portions labelled C. An exposureroute 111 is depicted, although it will be appreciated that otherexposure routs may be used (such as shown in FIG. 12, for example). Toexpose one of the target portions C to the pattern 110, the wafer tableWT is moved to scan the wafer W in time with the scanning movement ofthe mask MA.

During exposure of a target portion of a wafer, the support structure MTis moved to scan the pattern 110 through the radiation beam PB. Thewafer table WT is scanned simultaneously so as to expose an entiretarget portion C to the pattern provided on the patterned region 110.After exposure of a target portion C, the wafer table WT is moved toposition the wafer W for the next exposure. For example, where thetarget portion 112 of FIG. 28 is the most recent target portion to beexposed (in what may be a “scan-down” operation), the wafer table WTfollows the exposure route 111 to position the wafer W for the exposureof the next target portion 113 (in what may be a “scan-up” operation).

In an embodiment, wafer gratings may be provided along or near to theexposure route 111 such that calibration measurements may be takenduring exposure of a wafer. In particular, wafer diffraction gratings WGmay be provided on the wafer and/or outside the wafer, e.g. on the wafertable WT. In the example of FIG. 28, a first wafer diffraction gratingarray is WG1 is provided along the exposure route 111 at a cornerposition of the wafer W in which a target portion C is not provided(e.g. due to the circular geometry of the wafer W). A second waferdiffraction grating WG2 is provided along the exposure route 111 outsidethe wafer W, while a third wafer diffraction grating WG3 is providedalong the exposure route 111 in a scribe lane between two targetportions.

It will be appreciated that the flexibility of positioning of the wafergratings is such that alignment calibration may be performed at any orall of multiple points during an exposure sequence. For example, wherewafer gratings are placed on the wafer table WT (e.g., not on the waferW itself), alignment calibration may be performed at the very beginningof the exposure sequence, before exposure of any of the target portionsC has occurred. Where desired, alignment may continue at points duringthe exposure sequence.

Referring again to FIG. 27, it was described above that to pattern eachtarget portion C, the mask patterned region 110 is scanned through theradiation beam PB. A plurality of mask sensor apparatuses MS1B-MS6B areprovided outside of the patterned region 110. In the depicted exampleembodiment, three mask sensor apparatuses MS1B-MS3B are provided on aleft-hand side of the mask MA and three mask sensor apparatusesMS4B-MS6B are provided on a right-hand side of the mask MA. Afterscanning the patterned region 110 through the radiation beam, the masksupport structure MT is configured to continue to scan the mask MAbeyond the patterned region 110 so that the radiation beam PB isincident on one side's mask sensor apparatuses. In this way, threesensor apparatuses are used following each scan-up and scan-downoperation.

In other embodiments, mask sensor apparatuses may be provided separatelyto the mask MA, e.g. on the support structure MT. FIG. 29 depicts analternative arrangement in which a plurality of mask sensor apparatusesare provided in an area 120 adjacent the mask MA on the supportstructure MT. Provision of the mask sensor apparatuses 120 on thesupport structure MT may provide greater freedom and cost effectivenessthan placement of mask sensor apparatuses directly on the mask MA.Additionally, the area 120 may be arranged such that the completeexposure area of the radiation beam PB is utilised, thereby allowingmore mask sensor apparatuses to be used and in different configurations.

To reduce the impact of calibration measurements on throughput of thelithographic apparatus, the mask sensor apparatuses may be placed at theturning point (in the x-dimension) of the support structure MT.

In other embodiments, the mask MA may not be a scanning system. That is,the lithographic apparatus may be arranged such that the entirepatterned region 110 is within the extent of the radiation beam PB. Inthis case, following the patterning of a target region C, the supportstructure MT may be arranged to move the mask MA to place one or moremask sensor apparatuses in the path of propagation of the radiation beamPB.

As described above, the illuminator IL may comprise adjusting means forselecting an illumination mode of the radiation beam PB such as a dipolemode, a quadrupole mode, or other mode for use with the mask sensorapparatuses. Where the calibration measurements are taken during anexposure sequence of a wafer W, the adjusting means may be operable tochange the illumination mode of the radiation beam PB after patterning atarget region C of the wafer W and before performing a calibrationmeasurement. The adjusting means may then return the illumination moderequired for patterning the next target region C.

In each of the examples of FIG. 28, the placement of the waferdiffraction gratings WG1-WG3 is such that obtaining calibrationmeasurements may be considered to be “throughput neutral”. That is, asthe wafer diffraction gratings WG1-WG3 are positioned exactly along theexposure route, at points during which none of the target regions C arebeing patterned, the calibration measurements may be taken withoutimpacting the throughput of the lithographic apparatus. It will beappreciated, however, that where it is not possible to provide a wafergrating WG exactly along the exposure route 111, a wafer grating WG maybe provided adjacent the exposure route 111 such that any impact onthroughput is significantly reduced. Generally therefore, it is to beunderstood that wafer gratings WG may be placed on or near to theexposure route 111 outside of the target portions C.

It will be appreciated from the above that calibration measurementstaken as part of an exposure sequence may use any individual embodimentor combination of embodiments described above.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.having a wavelength of 365, 248, 193, 157 or 126 nm) and extremeultra-violet (EUV) radiation (e.g. having a wavelength in the range of5-20 nm), as well as particle beams, such as ion beams or electronbeams.

The lithographic apparatus may be of a type wherein the wafer isimmersed in a liquid having a relatively high refractive index, e.g.water, so as to fill a space between the final element of the projectionsystem and the wafer. Immersion techniques are well known in the art forincreasing the numerical aperture of projection systems.

The term “projection system” used herein should be broadly interpretedas encompassing various types of projection system, including refractiveoptical systems, reflective optical systems, and catadioptric opticalsystems, as appropriate for example for the exposure radiation beingused, or for other factors such as the use of an immersion fluid or theuse of a vacuum.

Although embodiments of the invention have been described in the contextof a transmissive lithographic apparatus, the invention may also be usedin a reflective lithographic apparatus (e.g. an EUV lithographicapparatus). Where this is the case, due to the reflective nature of thelithographic apparatus a radiation beam from an illumination system ofthe lithographic apparatus may be directed towards a mask at an angle(i.e. not perpendicular to the mask). This angle of incidence is knownand does not change. Therefore, detectors and associated filters may beconfigured such that their measurements are not affected by the angle.For example, a detector (and associated filter) which is aligned withthe direction of incidence of the radiation beam may be removed. Thisleaves behind three detectors and associated filters, which may forexample be used in the manner described above for three illuminationpoles.

Although embodiments of the invention have been described in the contextof a lithographic apparatus, embodiments of the invention may be used inother apparatus. Embodiments of the invention may form part of a maskinspection apparatus, a metrology apparatus, or any apparatus thatmeasures an object such as a wafer (or other substrate) or mask (orother patterning device). These apparatus may be generally referred toas lithographic tools. In the context of such apparatus, projectionoptics of the tool may be considered to be equivalent to a projectionsystem. The grating used to diffract the illumination mode poles may beprovided on any suitable surface on a first side of the projectionoptics. An object (e.g. a wafer or a mask) may be provided be held by asupport structure on an opposite side of the projection optics.

While specific embodiments of the invention have been described above,it will be appreciated that the invention may be practiced otherwisethan as described. The description is not intended to limit theinvention.

The invention claimed is:
 1. A method for exposing a wafer in alithographic apparatus comprising: executing at least one calibrationmeasurement during an exposure sequence of a wafer, each calibrationmeasurement comprising: using at least one radiation pole to illuminatea diffraction grating on at least one of a support structure supportinga mask at a mask side of a projection system and the mask of thelithographic apparatus; coupling at least two different resultingdiffraction orders per illumination pole through the projection system;using the projection system to project the diffraction orders onto anobject grating on or adjacent an exposure route of a wafer such that apair of combination diffraction orders is formed by diffraction of thediffraction orders; coupling the combination diffraction orders backthrough the projection system to a detector system configured to measurean intensity of the combination diffraction orders; and using themeasured intensity of the combination diffraction orders to measure aposition of the object grating.
 2. The method of claim 1, furthercomprising adjusting responsive to at least one calibration measurementat least one of the exposure route of the wafer and the supportstructure prior to exposing a target portion of the wafer.
 3. The methodof claim 2, wherein at least one calibration measurement is executed atthe beginning of an exposure sequence prior to exposure of any targetportions of the wafer.
 4. The method of claim 2, wherein the objectgrating is positioned on the wafer table outside the wafer.
 5. Themethod of claim 2, wherein the object grating is positioned on thewafer.
 6. The method of claim 1, wherein at least one calibrationmeasurement is executed at the beginning of an exposure sequence priorto exposure of any target portions of the wafer.
 7. The method of claim6, wherein the object grating is positioned on the wafer table outsidethe wafer.
 8. The method of claim 6, wherein the object grating ispositioned on the wafer.
 9. The method of claim 8, wherein the objectgrating is positioned in a scribe lane between target portions of thewafer.
 10. The method of claim 1, wherein the object grating ispositioned on the wafer table outside the wafer.
 11. The method of claim1, wherein at least one calibration measurement is executed followingexposure of a target portion of the wafer and prior to exposure of anext exposure sequence.
 12. The method of claim 1, wherein the objectgrating is positioned on the wafer.
 13. The method of claim 12, whereinthe object grating is positioned in a scribe lane between targetportions of the wafer.
 14. The method of claim 13, wherein a furtherobject grating is positioned on the wafer table outside the wafer. 15.The method of claim 12, wherein a further object grating is positionedon the wafer table outside the wafer.
 16. The method of claim 1, furthercomprising moving the support structure to move the radiation beam fromthe mask to the diffraction grating on the support structure.
 17. Themethod of claim 1, wherein the mask side diffraction grating istwo-dimensional.
 18. The method of claim 1, wherein the object gratingis two-dimensional and extends across substantially an entire wafer.